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ZXMC3A18DN8
Absolute maximum ratings
Parameter
Symbol
N-channel P-channel
Unit
Drain-source voltage
Gate-source voltage
Continuous drain current (V GS = 10V; T amb =25°C) (b)(d)
(V GS = 10V; T amb =70°C) (b)(d)
(V GS = 10V; T amb =25°C) (a)(d)
Pulsed drain current (c)
Continuous source current (body diode) (b)
Pulsed source current (body diode) (c)
Power dissipation at T amb =25°C (a)(d)
Linear derating factor
Power dissipation at T amb =25°C (a)(e)
Linear derating factor
Power dissipation at T amb =25°C (b)(d)
Linear derating factor
V DSS
V GS
I D
I DM
I S
I SM
P D
P D
P D
30
±20
7.6
6.1
5.8
37
3.6
37
1.25
10
1.8
14
2.1
17
-30
±20
-6.3
-5.0
-4.8
-30
3.2
30
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
Operating and storage temperature range
T j , T stg
-55 to +150
°C
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to
ambient (a)(d)
R JA
100
°C/W
Junction to ambient (a)(e)
Junction to ambient (b)(d)
R JA
R JA
70
60
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300 s, d<= 0.02. Refer to
transient thermal impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
Issue 2 - September 2007
? Zetex Semiconductors plc 2007
2
www.zetex.com
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